Publications

  • Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3
    F.C. Chen, Y. Zhu, S. Liu, Y. Qi, H.Y. Hwang, N.C. Brandt, J. Lu, F. Quirin, H. Enquist, P. Zalden, T. Hu, J. Goodfellow, M-J. Sher, M.C. Hoffmann, D. Zhu, H. Lemke, J. Glownia, M. Chollet, A. R.Damodaran, J. Park, Z. Cai, I.W. Jung, M.J. Highland, D.A. Walko, J. W.Freeland, P.G. Evans, A. Vailionis, J. Larsson, K.A. Nelson, A.M. Rappe, K. Sokolowski-Tinten, L. W. Martin, H. Wen, A.M. Lindenberg
    Phys. Rev. B, 94, 180104(R), (2016)
  • THz-driven ultrafast spin-lattice scattering in amorphous metallic ferromagnets
    S. Bonetti, M.C. Hoffmann, M.-J. Sher, Z. Chen, S.-H. Yang, M.G. Samant, S.S.P. Parkin, H.A. Dürr
    Phys. Rev. Lett., 117, 087205, (2016)
  • Mechanism for Broadband White-Light Emission from Two-Dimensional (110) Hybrid Perovskites
    T. Hu, M.D. Smith, E.R. Dohner, M.-J. Sher, X. Wu, M. Trinh, A. Fisher, J. Corbett, X.-Y. Zhu, H.I. Karunadasa, A.M. Lindenberg
    J. Phys. Chem. Lett., 7, 2258 (2016)
  • Picosecond electric field induced threshold switching in phase-change materials
    P. Zalden, M.J. Shu, F. Chen, X. Wu, Y. Zhu, H. Wen, S. Johnston, Z.-X. Shen, P. Landreman, M. Brongersma, S. W. Fong, H.-S. Philip Wong, M.-J. Sher, P. Jost, M. Kaes, M. Salinga, A. von Hoegen, M. Wuttig, A.M. Lindenberg
    Phys. Rev. Lett., 117, 067601 (2016)
  • Time- and Temperature-Independent Local Carrier Mobility and Effects of Regioregularity in Polymer-Fullerene Organic Semiconductors
    M.-J. Sher, J.A. Bartelt, T.M. Burke, A. Salleo, M.D. McGehee, A.M. Lindenberg
    Adv. Electron. Mater., 2, 1500351, (2016)
  • Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material
    R. Jaramillo, M.-J. Sher, B.K. Ofori-Okai, V. Steinmann, C. Yang, K. Hartman, K. A. Nelson, A.M. Lindenberg, R. G. Gordon, T. Buonassisi
    J. Appl. Phys., 119, 035101 (2016)
  • Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: the dopant incorporation mechanism
    M.-J. Sher, N. Mangan, M. J. Smith, Y.-T. Lin, S. Marbach, T.M. Schneider, S. Gradečak, M.P. Brenner, E. Mazur
    J. Appl. Phys., 117, 125301 (2015)
  • Ultrafast electronic and structural response of monolayer MoS2 under intense photoexcitation conditions, E.M. Mannebach, K.N. Duerloo, L. Pellouchoud, M.-J. Sher, S. Nah, Y. Kuo, Y. Yu, A. Marshall, L. Cao, E.J. Reed, A.M. Lindenberg, ACS Nano, 8, 10734 (2014)
  • Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon
    M.-J. Sher, C.B. Simmons, J.J. Krich, A.J. Akey, M.T. Winkler, D. Recht, T. Buonassisi, M.J. Aziz, and A.M. Lindenberg
    Appl. Phys. Lett., 105, 053905 (2014)
  • Improving dopant incorporation during femtosecond- laser doping of Si with a Se thin-film dopant precursor
    M.J. Smith, M-J Sher, B. Franta, Y.-T. Lin, E. Mazur and S. Gradecak
    Appl. Phys. A, 114, 1009 (2014)
  • Mid-infrared absorptance of silicon hyperdoped with chalcogen via fs-laser irradiation
    M.-J. Sher, Y.-T. Lin, M.T. Winkler, E. Mazur, C. Pruner and A. Asenbaum
    J. Appl. Phys., 113, 063520 (2013)
  • Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon
    B. K. Newman, E. Ertekin, J.T. Sullivan, M.T. Winkler, M.A. Marcus, S. Fakra, M.-J. Sher, E. Mazur, J. C. Grossman and T. Buonassisi
    J. Appl. Phys., 114, 133507 (2013)
  • Selenium segregation in femtosecond-laser hyperdoped silicon revealed by electron tomography
    Haberfehlner, M.J. Smith, J. Idrobo, G. Auvert, M.-J. Sher, M.T. Winkler, E. Mazur, N. Gambacorti,S. Gradečak and P. Bleuet
    Microscopy and Microanalysis 19, 716 (2013)
  • The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
    M.J. Smith, M.-J. Sher, B. Franta, Y.-T. Lin, E. Mazur and S. Gradečak
    J. Appl. Phys., 112, 083518 (2012)
  • Studying femtosecond-laser hyperdoping by controlling surface morphology,
    M.T. Winkler, M.-J. Sher, Y.-T. Lin, M.J. Smith, H. Zhang, S. Gradečak , E. Mazur
    J. Appl. Phys., 111, 093511 (2012)
  • Pressure-induced phase transformations during femtosecond-laser doping of silicon
    M.J. Smith, Y.-T. Lin, M.-J. Sher, M.T. Winkler, E. Mazur, S. Gradečak
    J. Appl. Phys., 110, 053524 (2011)
  • The effects of a thin film dopant precursor on the structure and properties of fs- laser irradiated silicon
    M.J. Smith, M.T. Winkler, M.-J. Sher, Y.-T. Lin, E. Mazur, S. Gradečak
    Appl. Phys. A, 105, 795 (2011)